Method and apparatus for detecting defects

ABSTRACT

A method and apparatus for detecting defects are provided for detecting defects or foreign matter on an object to be inspected. The apparatus includes a movable stage for mounting a specimen, an illumination system for irradiating a circuit pattern with light from an inclined direction, and an image-forming optical system for forming an image of an irradiated detection area on a detector from the upward and oblique directions. With this arrangement, diffracted light and scattered light caused on the circuit pattern through the illumination by the illumination system is collected. A spatial filter is provided on a Fourier transform surface for blocking the diffracted light from a linear part of the circuit pattern. The scattered and reflected light received by the detector is converted into an electrical signal. The converted electrical signal of one chip is compared with that of the other adjacent chip.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a Continuation of U.S. application Ser. No.12/831,102, filed Jul. 6, 2010, which is a Continuation of U.S.application Ser. No. 12/435,523, filed May 5, 2009, now U.S. Pat. No.7,751,037, which is a Divisional of U.S. application Ser. No.11/472,426, filed Jun. 22, 2006, now U.S. Pat. No. 7,528,942, whichclaims priority from Japanese Patent Application Nos. JP 2005-181400,filed Jun. 22, 2005, and JP 2006-049488, filed Feb. 27, 2006, thecontents of which are incorporated herein by reference.

BACKGROUND OF THE INVENTION

The invention relates to a method and apparatus for detecting defectswhich is adapted to detect a condition of occurrence of defects, such asforeign matter, in a manufacturing process of, for example, asemiconductor device, a liquid crystal display element, a printed board,or the like. The manufacturing process involves detecting a defect,e.g., foreign matter, caused in a step of forming a pattern on asubstrate so as to manufacture an object of interest, and analyzing andremedying the defect.

In the conventional semiconductor manufacturing process, the presence offoreign matter on a semiconductor substrate (a substrate of interest tobe inspected) may cause failures, including an electrical insulationfailure, and short-circuit of wiring. Furthermore, when a semiconductorelement is miniaturized to cause fine foreign matter in thesemiconductor substrate, this foreign matter may cause the electricalinsulation of a capacitor, or a breakage of a gate oxide film or thelike. Such foreign matter may occur due to various causes, for example,from a movable part of a conveying device, from a human body, from areaction with a process gas within a processing chamber, or fromcontaminant into a chemical agent or a material, and may be trapped intothe semiconductor substrate in various forms.

Also, in the similar manufacturing process of the liquid crystal displayelement, the presence of any defects, such as contamination by foreignmatter onto the pattern, may render the display element useless. Thesame holds true for the manufacturing process of the printed board, thatis, the contamination by foreign matter may cause the short-circuit ofthe pattern, and the defective connection.

One of these kinds of conventional techniques for detecting foreignmatter on a semiconductor substrate involves detecting scattered lightgenerated from foreign matter by irradiating the semiconductor substratewith a laser beam when the foreign matter is attached thereto, andcomparing a result of this detection with a result of previous detectionof the same kind of semiconductor substrate, as disclosed in, forexample, JP-A No. 89336/1987. This technique can eliminatemisinformation due to the pattern, and detect the foreign matter anddefects with high sensitivity and high reliability. As disclosed in, forexample, JP-A No. 135848/1988, another technique is known which involvesdetecting scattered light generated from foreign matter by irradiating asemiconductor substrate with a laser beam when the matter is attachedthererto, and analyzing the detected foreign matter using an analysistechnique, such as a laser photoluminescence, or a two-dimensional X-rayanalysis (XMR).

As another technique for detecting foreign matter, JP-A No. 218163/1993,and JP-A No. 258239/1994 disclose a method for detecting foreign matterand defects which involves irradiating a substrate of interest to beinspected, with coherent light linearly formed, removing the reflectedand scattered light from a repetitive pattern on the substrate with aspatial filter, and emphasizing and detecting the nonrepetitive foreignmatter and defects.

Furthermore, a foreign matter detector is known in JP-A No. 117024/1989which is adapted to irradiate a circuit pattern formed on the substrateof interest to be inspected, from the direction of an inclined angle of45 degrees with respect to a main group of lines of the pattern suchthat the 0-order diffracted light from the main group of lines does notenter an aperture of an objective lens. The '163 patent discloses thatdiffracted light from a group of lines other than the main group oflines is also blocked by a spatial filter.

Other conventional techniques relating to a method and apparatus fordetecting defects including foreign matter or the like are known in, forexample, JP-A 324003/1994, JP-A 271437/1996, and U.S. Pat. No.6,608,676.

In all the disclosures of the above-mentioned documents, however, asignal indicative of defects is missed due to scattered light from anirregular circuit pattern part, resulting in low sensitivity. On atransparent film, such as an oxide film, through which illuminatinglight passes, the brightness of the scattered light from the pattern isvaried by a change in film thickness, which may further result in thelower sensitivity.

SUMMARY OF THE INVENTION

It is an object of the invention to provide a method and apparatus fordetecting defects which can detect defects, such as fine foreign matter,at high speeds with high accuracy from a subject of interest forinspection with an oxide film through which illuminating light passes.

That is, in one aspect of the invention, a method for detecting a defectcomprises the steps of irradiating a specimen with a circuit patternincluding a repetitive pattern formed thereon, with light formed towardone direction in a long shape from an oblique direction, and detectingreflected and scattered light in a direction of a first elevation anglewith respect to the specimen by blocking scattered light from therepetitive pattern among reflected and scattered light beams from thespecimen irradiated with the light formed toward one direction in thelong shape, thereby obtaining a first detection signal. The method alsocomprises the steps of detecting reflected and scattered light in asecond elevation angle which is lower than the first elevation anglewith respect to the specimen by blocking the scattered light from therepetitive pattern among the reflected and scattered light beams fromthe specimen irradiated with the light formed toward one direction inthe long shape, thereby obtaining a second detection signal, andprocessing the first detection signal and the second detection signal todetect a defect including foreign matter on the specimen.

In another aspect of the invention, a method for detecting a defectcomprises the steps of irradiating a specimen with a circuit patternincluding a repetitive pattern formed thereon with first light formedtoward one direction in a long shape from an oblique direction at afirst azimuth angle, and irradiating an area on the specimen irradiatedwith the first light, with second light formed toward one direction in along shape from an oblique direction at a second azimuth angle. Themethod further comprises the steps of detecting reflected and scatteredlight from the specimen irradiated with the first and second lightsformed toward the respective directions in the long shape by blockingscattered light from the repetitive pattern, and processing a detectionsignal obtained by the detection to detect a defect including foreignmatter on the specimen.

In another aspect of the invention, a method for detecting a defectcomprises the steps of irradiating a specimen with a circuit patternincluding a repetitive pattern formed thereon, with pulse laser lightemitted from a light source from an oblique direction, detectingreflected and scattered light from the specimen irradiated with thepulse laser light by blocking scattered light from the repetitivepattern by a spatial filter, thereby obtaining a detection signal, andprocessing the detection signal to detect a defect including foreignmatter on the specimen. The specimen is irradiated with the pulse laserlight by dividing one pulse of the pulse laser light emitted from thelight source into a plurality of pulses to decrease a peak value of thepulse laser light emitted from the light source.

In another aspect of the invention, an apparatus for detecting a defectcomprises a light source adapted to emit illuminating light, table meansfor putting a specimen with a circuit pattern including a repetitivepattern formed thereon, irradiating means for forming the illuminatinglight emitted from the light source toward one direction in a longshape, and for irradiating the specimen put on the table means with thelight formed from an oblique direction, and first detection means fordetecting reflected and scattered light in a direction of a firstelevation angle with respect to the specimen by blocking scattered lightfrom the repetitive pattern among reflected and scattered light beamsfrom the specimen irradiated with the light formed toward one directionin the long shape by the irradiating means. The apparatus also includessecond detection means for detecting reflected and scattered light in adirection of a second elevation angle which is lower than the directionof the first elevation angle with respect to the specimen by blockingscattered light from the repetitive pattern among the reflected andscattered light beams from the specimen irradiated with the light formedtoward one direction in the long shape by the irradiating means, andsignal processing means for processing a first detection signal obtainedby the detection of the reflected and scattered light by the firstdetection means and a second detection signal obtained by the detectionof the reflected and scattered light by the second detection means,thereby detecting a defect including foreign matter on the specimen.

In another aspect of the invention, an apparatus for detecting a defectcomprises a light source adapted to emit illuminating light, table meansfor putting a specimen with a circuit pattern including a repetitivepattern formed thereon, irradiating means for forming the illuminatinglight emitted from the light source toward one direction in a longshape, and for irradiating the specimen put on the table means with thelight formed from an oblique direction, detection means for detectingreflected and scattered light from the specimen irradiated with thelight formed toward the one direction in the long shape by theirradiating means by blocking scattered light from the repetitivepattern, and signal processing means for processing a detection signalobtained through the detection by the detection mean, thereby detectinga defect including foreign matter on the specimen. The irradiating meansincludes an optical path branching unit for branching an optical path ofthe illuminating light emitted from the light source into a plurality ofoptical paths, and a plurality of irradiating units for forming thelights which are branched into by the optical branching unit to enterthe respective optical paths, toward respective directions in a longshape, and for irradiating the specimen with the lights from differentazimuth angle directions.

Furthermore, in another aspect of the invention, an apparatus fordetecting a defect comprises a light source adapted to emit illuminatinglight, table means for putting a substrate of interest to be inspectedwith a circuit pattern including a repetitive pattern formed thereon,first irradiating means for forming the illuminating light emitted fromthe light source toward one direction in a long shape, and forirradiating the specimen put on the table means with the light formedfrom an oblique direction at a first azimuth angle, and secondirradiating means for irradiating an area on the specimen irradiatedwith the first light, with second light formed toward one direction in along shape from an oblique direction at a second azimuth angle. Theapparatus for detecting a defect also includes detection means fordetecting reflected and scattered light from the specimen irradiatedwith the first light and the second light formed toward the respectivedirections in the long shape by the first irradiating means and thesecond irradiating means by blocking scattered light from the repetitivepattern, and signal processing means for processing a signal obtainedthrough the detection by the detection means to detect a defectincluding foreign matter on the specimen.

In another aspect of the invention, an apparatus for detecting a defectcomprises a light source adapted to emit illuminating light, table meansfor putting a specimen with a circuit pattern including a repetitivepattern formed thereon, irradiating means for irradiating the specimenput on the table means with the illuminating light emitted from thelight source from an oblique direction, detection means for detectingreflected and scattered light from the specimen irradiated with theilluminating light by the irradiating means by blocking scattered lightfrom the repetitive pattern by a spatial filter, and signal processingmeans for processing a detection signal obtained through the detectionby the detection means to detect a defect including foreign matter onthe specimen. The light source emits pulse laser light, and theirradiating means includes a pulse division unit for dividing one pulseof the pulse laser light emitted from the light source into a pluralityof pulses, and is adapted to irradiate the specimen with the laser lightwhose pulse is divided into the plurality of pulses by the pulsedivision unit.

According to the invention, the diffracted light from the pattern can bereduced, and when the transparent film, such as an oxide film, isformed, the diffracted light from an underlying pattern can also bereduced. That is, although the intensity of the thin-film interferenceis changed due to variations in thickness of films between chips withthe diffracted light from the underlying pattern serving as a secondarylight source, variations in the intensity of detection signals betweenthe chips due to this intensity change can be reduced. Thus, even underthe presence of the transparent film, such as the oxide film, defects orfine foreign matter on a substrate, such as a LSI substrate W ofinterest to be inspected, can be detected at high speeds with highaccuracy. Additionally, the foreign matter or defect on the transparentfilm can be detected and discriminated from the foreign matter or defectin or under the transparent film.

These and other objects, features and advantages of the invention willbe apparent from the following more particular description of preferredembodiments of the invention, as illustrated in the accompanyingdrawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic block diagram showing a structure of a defectdetecting apparatus according to one embodiment;

FIG. 2 is a perspective view of a substrate of interest to be inspectedfor explaining directions of illumination and detection;

FIG. 3 is a plan view of the substrate of interest to be inspected, andshowing a relationship among the shape of an illumination beam, a sensordetection area, and a scanning direction of a stage on the substrate ofinterest;

FIG. 4 is a plan view of the substrate of interest to be inspected, andshowing a case where a slit-like beam illuminates the substrate ofinterest, and reflected and scattered light is detected from alongitudinal direction of the slit-like beam;

FIG. 5 is a perspective view of the substrate of interest to beinspected, and showing an illumination flux provided when the slit-likebeam illuminates the substrate of interest using a cylindrical lens;

FIG. 6A is a schematic plan view showing a structure of an illuminationoptical system for illuminating the substrate of interest to beinspected with the slit-like beam;

FIG. 6B is a front view thereof;

FIG. 7 is a schematic side view showing a structure of an upwarddetection optical system when an optical axis for detection isperpendicular to the substrate of interest to be inspected W;

FIG. 8A is a plan view of a pattern and showing a relationship betweenthe pattern P and an illumination direction 700;

FIG. 8B is a diagram showing an imaginary spherical surface 900 on thesubstrate of interest to be inspected;

FIG. 8C is a plan view of the substrate of interest to be inspected, andshowing emission of diffracted light by illumination at an illuminationazimuth angle of 45 degrees;

FIG. 8D is a plan view of the substrate of interest to be inspected, andshowing a relationship between a spatial filter and the substrate ofinterest to be inspected;

FIG. 9 is a schematic perspective view showing a structure of adetection optical system adapted for detection from the direction of anangle of 270 degrees with reference to a reference direction within aflat surface of the substrate of interest to be inspected;

FIG. 10A is a schematic side view showing the structure of the detectionoptical system adapted for detection from the direction of an angle of270 degrees with reference to the reference direction within the flatsurface of the substrate of interest to be inspected;

FIG. 10B is a schematic front view of the structure of the detectionoptical system;

FIG. 11 is a perspective view for explaining a structure adapted fordetection from the direction of an angle of θ with reference to thereference direction within the flat surface of the substrate of interestto be inspected;

FIG. 12A is a schematic side view showing the structure of the detectionoptical system adapted for detection from the direction of an angle of θwith reference to the reference direction within the flat surface of thesubstrate of interest for inspection;

FIG. 12B is a schematic front view of the structure of the detectionoptical system;

FIG. 13 is a plan view of the substrate of interest to be inspected, andshowing a state in which a slit-like beam illuminates in a travelingdirection of an angle of 45 degrees or 135 degrees with respect to thereference direction (θ=0 degree) within the flat surface of thesubstrate, and is detected from the direction of an angle of 0 degree;

FIG. 14 is a perspective view showing an illumination luminous fluxprovided when a slit-like beam illuminates the substrate of interest forinspection in the direction of an angle of 45 degrees with respect tothe horizontal direction using the cylindrical lens;

FIG. 15A is a schematic side view showing a structure of an illuminationoptical system adapted to cause a slit-like beam to illuminate the flatsurface of the substrate of interest for inspection in the direction ofan angle of 135 degrees with reference to the reference direction;

FIG. 15B is a schematic front view of the structure of the illuminationoptical system;

FIG. 16 is a schematic block diagram showing a structure of a firstmodification of the defect detecting apparatus according to theembodiment;

FIG. 17 is a perspective view showing a relationship between thesubstrate of interest to be inspected, and an image-forming lens and anobjective lens of an oblique detection system adapted for detection inthe direction of an angle of 270 degrees with respect to the referencedirection within the flat surface of the substrate of interest to beinspected;

FIG. 18 is a schematic front view showing a structure of the obliquedetection system adapted for detection in the direction of an angle of270 degrees within the flat surface of the substrate of interest to beinspected;

FIG. 19A is a sectional view of a specimen for explaining the occurrenceprinciple of variations in brightness of a pattern in the transparentfilm;

FIG. 19B is a graph showing the dependency of variations in theintensity of transmitted light due to the thin-film interference on afilm thickness;

FIG. 20A is a graph showing a reflectance of S polarization at aninterface of the transparent film, and the width of variations in theintensity of transmitted light when the S polarization illuminates;

FIG. 20B is a graph showing a reflectance of P polarization at aninterface of the transparent film, and the width of variations in theintensity of transmitted light when the P polarization illuminates;

FIG. 20C is a graph representing a relationship between an emissionangle φ0 of the light from the transparent film into the air and theintensity of light;

FIG. 21A is a plan view of a spatial filter for selective detection of ahigh elevation angle;

FIG. 21B is a plan view of a spatial filter for selective detection of amiddle elevation angle;

FIG. 21C is a plan view of a spatial filter for selective detection of alow elevation angle;

FIG. 22A is a graph showing dependency of a transmittance of incidentlight into an interface of the transparent film, and of a transmittanceof emitted light from the interface on an incident angle;

FIG. 22B is a graph showing dependency of a transmittance of theincident light into the interface of the transparent film, and of atransmittance of the emitted light from the interface on the emissionangle;

FIG. 23A is a block diagram showing a relationship of arrangement of thedetection system with respect to the substrate of interest to beinspected, for individually detecting defects on and in the film;

FIG. 23B is a diagram explaining a method for classifying defects on andin the film;

FIG. 24A is a perspective view of a detection optical system 2001(1)adapted for detection from the direction of an angle of zero degree withrespect to the reference direction within the flat surface of thesubstrate of interest to be inspected;

FIG. 24B is a side view of the detection optical system 2001(1);

FIG. 25A is a perspective view of a detection optical system 2001(2)adapted for detection from the direction of an angle of zero degree withrespect to the reference direction within the flat surface of thesubstrate of interest to be inspected;

FIG. 25B is a side view of the detection optical system 2001(2);

FIG. 26A is a diagram showing a relationship between the width of theshape of a slit-like beam in the x direction on the substrate ofinterest to be inspected, and the width of a detection area in the xdirection, and showing that the width of the shape of the slit-like beamof illuminating light LS in the X direction is narrower than that of thedetection area SA, and the width of a detection pixel is defined by theilluminating light by accumulating signals every distance correspondingto the illumination width;

FIG. 26B is a diagram showing a relationship between the width in the xdirection of the shape of the slit-like beam on the substrate ofinterest to be inspected and the width of the detection area in the Xdirection, wherein the width of the shape of the slit-like beam ofilluminating light LS in the x direction is wider than that of thedetection area SA;

FIG. 27A is a block diagram showing a configuration of an illuminationoptical system;

FIG. 27B is a block diagram showing a configuration of a detectionoptical system;

FIG. 28 is a block diagram showing a configuration of a secondmodification of the defect detecting apparatus according to theembodiment;

FIG. 29 is a substantial plan view of the defect detecting apparatus forexplaining a positional relationship between the illumination system andthe detection system when light illuminates from a plurality of azimuthangle directions;

FIG. 30A is a schematic front view showing a configuration of amodification of the illumination optical system;

FIG. 30B is a schematic plan view showing a configuration of amodification of the illumination optical system;

FIG. 31A is a schematic front view showing a configuration of a pulsebeam division optical system 200 which divides a pulse beam into twoparts;

FIG. 31B illustrates a graph (on the upper stage) of the pulse shape ofa pulse laser beam emitted from a light source 100, and a graph (on thelower stage) of the pulse shape of the pulse laser beam divided into twoparts, and emitted from the pulse beam division optical system 200;

FIG. 32A is a schematic front view showing another modification of apulse beam division optical system 200 which divides a pulse beam intotwo parts;

FIG. 32B illustrates a graph (on the upper stage) of the pulse shape ofa pulse laser beam emitted from the light source 100, and a graph (onthe lower stage) of the pulse shape of a P polarization pulse laser beamdivided into two parts and emitted from a PBS 224;

FIG. 33A is a schematic front view of a configuration of an opticalsystem dividing a pulse beam into four parts, which system is amodification of the pulse beam division optical system 200; and

FIG. 33B illustrates a graph (on the upper stage) of the pulse shape ofa pulse laser beam emitted from the light source 100, and a graph (onthe lower stage) of the pulse shape of a pulse laser beam emitted from apolarizing plate 221 c and divided into four parts.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Exemplary preferred embodiments of the invention will be describedhereinafter with reference to FIGS. 1 to 27.

FIG. 1 illustrates a schematic configuration of an apparatus fordetecting defects, including foreign matter, according to oneembodiment. The defect detecting apparatus includes an X-Y-Z-θ stage 17,an X-Y-Z-θ stage driver 16, an object to be inspected (a semiconductorsubstrate of interest to be inspected) W, a light source driver 15, anoblique illumination system 1000, an upward detection system 2000, anoblique detection system 2001, comparison processors for determinationof defects 3000 and 3001, a computer 11, a display 12, a centralprocessing unit 13, and a storage device 14.

The operation of the defect detecting apparatus will be described below.First, the substrate of interest to be inspected W mounted on theX-Y-Z-θ stage 17 is irradiated with light emitted from a light source100 via an illumination optical system 200. Scattered light toward theupward detection system 2000 among scattered light beams from thesubject W is collected by an objective lens 3 a, and detected andphotoelectrically converted by a detector 6 a via a spatial filter 4 a,a detection-light optical filter means 302 a, and an image-forming lens5 a. On the other hand, scattered light toward the direction of theoblique detection system 2001 is collected by the objective lens 3 b,and detected and photoelectrically converted by a detector 6 b via thespatial filter 4 b, an image-forming lens 5 b, and a detection-lightoptical filter means 302 b.

At this time, the scattered light from the foreign matter is detected,while horizontally moving the X-Y-Z-θ stage 17 with the substrate Wmounted thereon, so that the result of detection can be obtained in theform of a two-dimensional image. The thus-obtained images pass throughdelay circuits 7 a and 7 b, and then are stored in respective memories 8a and 8 b. Once the images detected from an adjacent chip are stored inmemories 9 a and 9 b, the comparison circuits 10 a and 10 b respectivelycompare the images of the chip stored by the memories 8 a and 8 b withthose of the same area of the adjacent chip stored by the memories 9 aand 9 b, thereby determining the presence of foreign matter or defectsfrom the result of comparison. If diffracted and scattered light fromthe pattern is small enough, for example, because it is reduced by thespatial filters 4 a and 4 b, or by an illumination detection directionor selection of a polarization, the comparison process is not carriedout, and a signal corresponding to a value equal to or above a thresholdvalue can be determined to be associated with the defect. The result ofdetermination is displayed on the display 12 or stored in the storagedevice 14 by the computer 11. Furthermore, information on the size andposition of the foreign matter is specified by the central processingunit 13.

The illumination optical system 200 is configured to irradiate thesubstrate of interest to be inspected W with the light, using a beamexpander, and a cylindrical lens, and adjusted such that focal points ofthe upward detection system 2000 and the oblique detection system 2001are irradiated with the light. Note that in the embodiments, the lightirradiated is a slit-like beam composed of substantially collimatedlight in the longitudinal direction.

Since a light source having a short wavelength is desired to be used asthe illumination light source so as to improve the sensitivity ofdetection of foreign matter in selecting the light source 100, a YAGlaser, an Ar laser, or a UV laser is appropriate. Furthermore, in orderto manufacture the small-sized low-cost detecting apparatus, asemiconductor laser is also appropriate.

The upper detection system 2000 and the oblique detection system 2001are configured to have the objective lenses 3 a and 3 b, and theimage-forming lenses 5 a and 5 b such that the scattered light from thesubstrate W of interest for inspection among the light emitted from theoblique illumination system 1000 is collected and image-formed on thedetectors 6 a and 6 b, respectively. The upward detection system 2000and the oblique detection system 2001 constitute a Fourier transformoptical system configured to optically process the scattered light fromthe substrate W, for example, to modify and adjust the opticalproperties by spatial filtering. When the spatial filtering is carriedout as the optical process, the use of the collimated light beams as theilluminating light improves the detection characteristics of foreignmatter. For this reason, the slit-like beam is used which is composed ofthe substantially collimated light in the longitudinal direction.

The detectors 6 a and 6 b are used to receive the scattered lightcollected by the upward and oblique detection systems 2000 and 2001,respectively, and to photoelectrically convert the light. The detectors6 a and 6 b may include, for example, a TV camera, a CCD linear sensor,a TDI sensor, an anti-blooming TDI sensor, a photomultiplier arraysensor, and the like.

In selection of the detectors 6 a and 6 b, when weak light is to bedetected, the photomultiplier array sensor, or the CCD sensor having theelectron multiplying function, such as an electron bombardment CCD(EBCCD), or an electron multiplying CCD (EMCCD), may be used. In orderto obtain the two-dimensional image at high speeds, the TV camera isdesirable. When the upward detection system 2000 and the obliquedetection system 2001 of the embodiment are of the image-forming type,the TV camera, the CCD linear sensor, the TDI sensor, the area CMOSsensor, or the linear CMOS sensor should be used. Particularly, in orderto output signals at high speeds, a detector should be used whichincludes a plurality of signal output ports capable of outputtingsignals in parallel. When a dynamic range of light received by thedetectors 6 a and 6 b is large, that is, when light whose intensityexceeds a saturation level of the sensor is incident, the use of thesensor with the anti-blooming function can prevent an influence ofsaturation pixels on surrounding pixels, thus enabling the detection ofdefects including foreign matter or the like in the vicinity of asaturation area. In particular, for the TDI sensor, the anti-bloomingtype is desirable.

The comparison processor for determination of defects 3000 compares thedetection result of one chip with that of the corresponding area of theadjacent chip to determine the presence of defects or foreign matter.For example, a difference in detected image of the same area between theadjacent chips is calculated and binarized, and then the signal having avalue that is equal to or more than the binarized threshold value isdetermined to indicate the presence of foreign matter. This comparisonprocessor for determination of defects 3000 can measure the size offoreign matter from the size of the binarized signal. If diffracted andscattered light from the pattern is small enough as compared with thediffracted and scattered light from the defect, for example, because itis reduced by the spatial filters 4 a and 4 b, or by an illuminationdetection direction, or by selection of a polarization, the comparisonprocess may not be carried out, and a signal having the value equal toor above the threshold value can be determined to be associated with thedefect.

Now, the oblique illumination system 1000, the upward detection system2000, and the oblique detection system 2001 will be described in detailwith reference to FIGS. 2 to 18, and FIGS. 24 to 28.

FIG. 27A is a block diagram showing a configuration of the obliqueillumination system 1000, and FIG. 27B is a block diagram showing aconfiguration of the upward detection system 2000 and the obliquedetection system 2001. The oblique illumination system 1000 includes thelight source 100, lens systems for forming the slit-like beam (200 a,200 b, 201 a, 201 b), and an illuminating-light optical filter means 301disposed on any one or more positions designated by the dotted lineLSOF.

As the illuminating-light optical filter means 301, an optical elementcapable of adjusting the intensity of light, such as a ND filter, or anoptical attenuator, or a polarization-optical element, such as apolarizing plate, a polarized beam splitter, or a wavelength plate, or awavelength filter, such as a bandpass filter, or a dichroic mirror, canbe used to control the light intensity, polarization characteristic, andwavelength characteristic of the illuminating light.

When a laser light source having high coherence is used as a lightsource, a speckle which may be noise in detection tends to occur. Inorder to reduce the speckle, a means for reducing coherency of theilluminating light may be provided as the illuminating-light opticalfilter means 301. For example, as measures for reducing the coherency,the following method may be used. The method may involves generating aplurality of luminous fluxes with different optical path lengths by useof a plurality of optical fibers having different optical path lengthsfrom each other, a quartz plate, or a glass plate, and superimposing theluminous fluxes on one another. Alternatively, the method may involveusing a rotating diffuser.

The upward detection system 2000 and the oblique detection system 2001include Fourier transform lens systems (3 a, 3 b, 5 a, 5 b) forcollecting and image-forming the detection light, spatial filters (4 a,4 b) for blocking a specific Fourier component, and detection-lightoptical filter means (302 a, 302 b) disposed on any one or morepositions designated by the dotted line LSOF. As the detection-lightoptical filter means 302 a, 302 b, an optical element capable ofadjusting the intensity of light, such as the ND filter, or the opticalattenuator, or a polarization-optical element, such as the polarizingplate, the polarized beam splitter, or the wavelength plate, or awavelength filter, such as the bandpass filter, or the dichroic mirror,can be used to control the light intensity, polarization characteristic,and wavelength characteristic of the detection light.

When the upward detection system 2000 largely differs from the obliquedetection system 2001 in the intensity of the detection light, one ofthe detection lights may deviate from the dynamic range of the sensor,and thus cannot be detected. In order to prevent this, respectiveattenuation factors of light intensity adjustment means used as thedetection-light optical filter means (302 a, 302 b), such as the NDfilter, or the optical attenuator, may be individually adjusted to keepthe balance of the amounts of detection lights between the upwarddetection system 2000 and the oblique detection system 2001, using thesame illuminating light for the upward and oblique detection systems2000 and 2001, thereby performing simultaneous detection by the upwardand oblique detection systems 2000 and 2001.

FIG. 2 is a diagram for explaining an illumination direction and adetection direction with respect to the substrate of interest to beinspected W. In the figure, a direction of the main group of lines ofthe pattern formed on the substrate W, or a direction perpendicular tothe direction of the main group of lines within the plane of thesubstrate W is referred to as an x direction, while a directionperpendicular to the x direction within the plane of the substrate W isreferred to as a y direction. The slit-like beam composed of collimatedlight to the substantially longitudinal direction is formed by use ofthe oblique illumination system 100 so as to have a light beam travelingdirection at an angle of θ (illumination azimuth angle) with respect to+x direction, and a longitudinal direction of the slit-like beam whichis ±y direction within the x-y surface. The traveling direction ofillumination has a predetermined tilt from a normal line of thesubstrate W of interest to be inspected. In the embodiment, thepredetermined tilt is designated by an angle α from the substrate W(illumination elevation angle). The traveling direction of illuminatinglight is represented by the illumination azimuth angle θ and theillumination elevation angle α. Note that the reason why theilluminating light is formed in the form of the slit-like beam LS isthat the high speed detection of defects, including foreign matter, isachieved. Also, the detection direction is represented by the detectionazimuth angle and the elevation angle.

FIG. 3 illustrates a relationship among the slit-like beam LS composedof the collimated light substantially to the longitudinal direction, thesensor detection area SA, and the stage scanning direction S. The widthof the sensor detection area SA in the longitudinal direction isincluded in the width of the illumination area LS of the slit-like beamcomposed of the substantially collimated light to the longitudinaldirection. The scanning direction S in which the substrate W of interestto be inspected is put and traveled is defined by a main scanningdirection (S1) as the x direction, and by a sub-scanning direction (S2)as the y direction. The illuminating light is applied such that thelongitudinal direction of the slit-like beam LS composed of thesubstantially collimated light to the longitudinal direction issubstantially vertical with respect to the main scanning direction S1 ofthe stage.

In the above-mentioned optical system, the substrate W of interest to beinspected is irradiated with the illuminating light at the angle α. FIG.5 illustrates an illumination direction of the illuminating light whenthe illumination azimuth angle θ=0 degree.

FIG. 6 illustrates an optical system adapted to emit the slit-like beamLS whose traveling direction is +x direction with its azimuth angle θset to 0 degree, and which is composed of substantially collimated lightin the ±y direction. Light emitted from the laser light source 100 ismagnified by a beam expander composed of convex lenses 200 a and 200 b,and compressed in one direction by a cylindrical lens 200 c. In theinvention, the cylindrical lens 200 c is used to achieve illuminationwhich is critical in the x direction and collimated in the y direction.FIG. 14 is a perspective view for explaining illumination having anillumination azimuth angle θ other than zero degree (θ=0), and FIG. 15is a side view thereof (in the figure, θ=45 degrees). As shown in FIG.15, by inclining the cylindrical lens, the illuminating light can enterthe substrate W of interest for inspection at any azimuth angle θ, whilemaintaining the shape of the slit-like beam formed on the substrate ofinterest to be inspected W.

FIG. 7 illustrates a configuration of the upward detection system 2000.The upward detection system 2000 is configured to collect the lightemitted from the illumination area LS on the substrate W of interest forinspection by the objective lens 3 a, and to detect the light by theone-dimensional detector 6 a, such as the TDI sensor, through thespatial filter 4 a for blocking a Fourier transform image of thereflected and diffracted light from the repetitive pattern, and theimage-forming lens 5 a. The spatial filter 4 a is put at a spatialfrequency area of the objective lens 3, that is, on an image-formingposition for the Fourier transform (corresponding to an exit pupil) soas to block the Fourier transform image provided by the reflected anddiffracted light from the repetitive pattern.

At this time, the beam LS of the illumination area on the substrate W ofinterest to be inspected as shown in FIG. 3 provides an image on thedetector 6 a by the objective lens 3 a constituting a relay lens, andthe image-forming lens 5 a. That is, the area SA shown in FIG. 3 is areception area of the one-dimensional detector 6 a, such as the TDIsensor or the like.

The longitudinal direction of the slit-like beam LS is oriented in thearranging direction of chips with respect to the substrate W of interestto be inspected, and perpendicular to the main scanning direction S1.This is why the integral direction of the sensor 6 a, which is the TDIsensor, can remain parallel to the traveling direction of the stage, thecomparison of image signals between the chips can be performed in asimple way, while the calculation of coordinates of a defective positionis also carried out easily, resulting in achieving the high speeddetection of defects, including foreign matter.

FIG. 4 is a plan view of a detection direction by the oblique detectionsystem 2001 when the slit-like beam LS illuminates, and detection iscarried out from the longitudinal direction of the slit-like beam LS(θ=90 degrees, or 270 degrees).

FIGS. 9 and 10 illustrate an example of the oblique detection system2001 serving as an optical system of the embodiment. The obliquedetection system 2001 is adapted to detect the substrate W of interestfor inspection from the direction of an azimuth angle of 270 degrees,which substrate is irradiated with the slit-like beam LS. FIG. 10illustrates a perspective view and a side view for explaining aschematic structure of the oblique detection system 2001. The obliquedetection system 2001 is configured to collect the light emitted fromthe illumination area LS on the substrate W of interest for inspectionby the objective lens 3 b, and to detect the light by theone-dimensional detector 6 b, such as the TDI sensor, through thespatial filter 4 b for blocking a Fourier transform image of thereflected and diffracted light from the repetitive pattern, and theimage-forming lens 5 b. As shown in FIG. 10, by inclining the detector 6b in the longitudinal direction according to an inclination of thedetection direction with respect to the substrate W of interest to beinspected, the light, which corresponds to the image on the substrate ofinterest for inspection W, can provide an image on the detector from theoblique direction.

FIGS. 24A and 24B illustrate a modified example of the oblique detectionsystem 2000 which has been explained using FIGS. 9 and 10, forexplaining the oblique detection system 2001(1) serving as an opticalsystem of the embodiment, for detecting the slit-like beam IS from thedirection of an azimuth angle perpendicular to the longitudinaldirection thereof (θ=0 degree, or 180 degrees). The oblique detectionsystem 2001(1) is configured to collect the light emitted from theillumination area LS on the substrate W of interest for inspection bythe objective lens 3 b(1), and to detect the light by theone-dimensional detector 6 b(1), such as the TDI sensor, through thespatial filter 4 b(1) for blocking a Fourier transform image of thereflected and diffracted light from the repetitive pattern, and theimage-forming lens 5 b(1). When the detector 6 b (1) is theone-dimensional detector, the y′ direction of FIG. 24A is thelongitudinal direction of the detector 6 b (1). As shown in FIG. 24B, byinclining the detector 6 b (1) in a direction perpendicular to thelongitudinal direction according to the inclination (β) of the detectiondirection with respect to the substrate W of interest to be inspected,an image provided on the substrate W of interest to be inspected can beformed on the detector 6 b (1) from the oblique direction.

In the above-mentioned method, the smaller the elevation angle ofdetection β, the larger the incident angle of the detection light into asensitive surface of the detector 6 b(1). In this case, some rate of thedetection light is reflected depending on the characteristics of thesensitive surface of the detector 6 b (1), thereby resulting ininsufficient sensitivity.

The use of the oblique detection system 2001 (2) shown in FIGS. 25A and25B can install the detector 6 b(2) in a direction perpendicular to thedetection light, without inclining the detector 6 b(1) as explained inFIGS. 24A and 24B, thereby preventing a decrease in sensitivity due tothe inclined entry of the light into the sensitive surface. In theoblique detection system 2001 (2) having the structure shown in FIGS.25A and 25B, the light emitted from the illumination area LS on thesubstrate W of interest to be inspected is collected by the objectivelens 3 b(2), and detected by the one-dimensional detector 6 b(2), suchas the TDI sensor, through the spatial filter 4 b(2) for blocking aFourier transform image of the reflected and diffracted light from therepetitive pattern, the image-forming lens 5 a (2), and thedetection-light optical filter means 302 b (2). A substantial detectionarea SA2 of the oblique detection system 2001(2) corresponds to thedetection area SA on the surface of the object on the substrate W ofinterest to be inspected, and a focus thereof deviates by an inclinationdue to the detection elevation angle β in a position apart from thecenter of a field of view. For this reason, in the oblique detectionsystem 2001(2) shown in FIGS. 25A and 25B, the two-dimensional detector,or the TDI sensor the number of whose accumulated stages needed forforming a two-dimensional image is large is not appropriate for thedetector 6 b (2). However, for the one-dimensional detector, such as thelinear CCD, or the TDI sensor the number of whose accumulated stages issmall, the field of view in the x direction is narrow, and a deviationin focus is small as compared with a focal depth determined by the NA ofthe objective lens 3 b (2) and the wavelength, which has a smallinfluence on blurring of the image. This enables detection by the imageforming process.

The field of view SA2 of the oblique detection system 2001 (2) as shownin FIG. 25 is projected onto the substrate W of interest to be inspectedat an elevation angle of detection β, and the corresponding detectionarea SA on the corresponding substrate W of interest for inspection ismagnified by 1/sin β times. Thus, magnifying the detection area canexpand an area per time scanned by the detector 6 b (2), so that thesubstrate W of interest to be inspected can be detected at high speeds.

Conversely, when the detection is intended to be carried out with highsensitivity and high accuracy by narrowing the detection area per timeand enhancing the detection resolution, the detection area magnified bythe detection elevation angle β needs to be narrowed. One of the methodsfor narrowing the detection area involves narrowing a field of view inthe x direction by employing a field stop as the detection-light opticalfilter means 302 b (2) installed on the optical path of the obliquedetection system 2001. The second method, as shown in FIG. 26A, involvessetting the width of the slit-like beam LS of the illuminating light inthe x direction narrower than that of the detection area SA, andaccumulating a signal at every distance corresponding to the width ofillumination, thereby defining the width of the detection pixel by theilluminating light. This can narrow the width of the detection areaexpanded by the elevation angle narrower than the width of the SAdefined by the oblique detection system 2001. FIG. 26B illustrates arelationship between the detection area SA and the shape of theslit-like beam LS when the detection resolution in the x direction isdefined by the detection area SA. FIGS. 11 and 12 illustrate the obliquedetection system 2001 (3) at times other than when the detection iscarried out from the direction of azimuth angles of θ=0, 90, 180, and270 degrees. FIG. 11 is a diagram for explaining the direction ofdetection. As shown in FIG. 12, the detector 6 b is inclined in thelongitudinal direction and in the direction perpendicular thereto in thetwo-dimensional manner, thereby enabling the detection from anydirection.

Now, the relationship between the direction of the illuminating light bythe oblique illumination system 1000, and the detection directions andthe detection NAs of the upward detection system 2000 and the obliquedetection system 2001 according to the embodiment of the invention willbe explained in detail.

FIGS. 17 and 18 illustrate another example of the configuration of anoblique detection system 2001 (4). The oblique detection system 2001 isconfigured to collect the light emitted from the illumination area LS onthe substrate W of interest for inspection by the objective lens 3 b,and to detect the light by the one-dimensional detector 6 b, such as theTDI sensor, through the spatial filter 4 b for blocking a Fouriertransform image of the reflected and diffracted light from therepetitive pattern, and the image-forming lens 5 b. In this example, theimage-forming lens 5 b is partially made from a large circular lensstructure as shown in FIG. 9. As shown in FIG. 10, the objective lens 3b, the spatial filter 4 b, and the image-forming lens 5 b are arrangedin parallel to the surface of the substrate W of interest to beinspected. The reflected and scattered light from the substrate W isdetected above the substrate W of interest. At this time, theillumination area LS on the substrate W of interest for inspection shownin FIG. 3 provides an image on the detector 6 b by the objective lens 3b constituting the relay lens, the spatial filter 4 b, and theimage-forming lens 5 b. That is, the SA of FIG. 3 designates the lightreceiving area of the one-dimensional detector 6 a, such as the TDIsensor.

FIG. 8A shows an illumination direction 700 with respect to the patternP at an illumination azimuth angle of θ. A spherical surface 900 shownin FIG. 8B is virtual, and is to consider the positions of apertures ofthe objective lenses 3 a and 3 b in the upward detection system 2000 andthe oblique detection system 2001. An intersection point of thespherical surface 900 and illuminating light 700 is a point 701. FIG. 8Cshows the emission of the diffracted light of the illumination at anangle of θ=45 degrees. When the pattern P is a nonrepetitive patternparallel to the y axis, the 0-order diffracted light is emitted in adirection of a ridge line of a cylinder having an illuminating point asa vertex, with an intersection point of the emission direction 901 ofthe regularly-reflected light and the virtual spherical surface 900being set as a point 703, and the direction of the pattern (y direction)being positioned at the center. Thus, the intersection point with thevirtual spherical surface 900 is positioned on a circle of the bottom ofthe cylinder. Therefore, this path is a line 704 parallel to the x axisas viewed from the direction of a normal line with respect to thesubstrate W of interest to be inspected. When the pattern P is thenonrepetitive pattern parallel to the y axis, the high-order diffractedlight is emitted in a periodic direction of the pattern P at equalintervals, as designated by a dotted line 705 in FIG. 8C. The intensityof the diffracted light becomes large in the vicinity of the line 704which represents the path of the 0-order light.

The aperture of the objective lens 3 a in the upward detection system2000 which is not inclined with respect to the direction of the normalline of the substrate W of interest to be inspected is an opening 800shown in FIG. 8C. As shown in FIG. 8C, when the optical axis of theupward detection system 2000 is vertical to the surface of the substrateW of interest to be inspected, the relationship between the numericalaperture (NA) of the objective lens 3 a and the elevation angle α of theilluminating light should be set based on a condition in which the0-order diffracted light 703 in the x and y directions from the circuitpattern with its main group of lines oriented the x and y directionsdoes not enter a pupil of the objective lens 3 a, as shown in FIG. 8C.That is, the relationship between the numerical aperture (NA) of theobjective lens 3 a and the elevation angle α of the illumination lightsatisfies the following formula (1) with the angle θ of the illuminationdirection 700 being set to about 0 degree. This can prevent the 0-orderdiffracted light 704 in the x and y directions from the circuit patternwith its main group of lines oriented the x and y directions fromentering the aperture 800 of the objective lens 3 a even when thepattern is the nonrepetitive pattern.

NA<cos α·sin θ, and NA<cos α·sin(π/2−θ)  (Formula 1)

Note that when the α is equal to or less than 30 degrees, the numericalaperture (NA) of the objective lens 3 a may be equal to or less thanabout 0.6.

These conditions are valid especially in the defect detecting apparatusfor a peripheral circuit area having a nonrepetitive pattern in a memoryLSI, a CPU core area and input and output areas having nonrepetitivepatterns in a LSI, such as a microcomputer, and a logic LSI having anonrepetitive pattern. In most cases, such a LSI pattern is a patternformed in parallel to the perpendicular direction (whose main group oflines are arranged perpendicularly), from which the 0-order diffractedlight is emitted in a specific direction. Thus, by preventing theemitted 0-order diffracted light from entering the objective lens 3 a,the diffracted light from these kinds of patterns is cancelled, therebyfacilitating the detection of only the reflected and diffracted lightfrom a defect, including foreign matter. More specifically, when thelevel of the detection signal from the circuit pattern is decreased, thedefect including the foreign matter can be detected with highsensitivity. It should be noted that for the repetitive pattern, thehigh-order (the first-order, second-order, third-order, . . . )diffracted light enters an aperture 800 of the objective lens 3 a, andappears as a group of parallel lines 705 as shown in FIG. 8C. Then, sucha high-order diffracted light may be blocked and cancelled by theband-like spatial filter 4 a. The distances between the diffracted lightspots and the positions thereof differ from one another depending on thesize and shape of the pattern formed on the substrate W of interest tobe inspected. The spatial filter 4 a whose blocking pattern ischangeable can be applied to various kinds of diffracted lights, thedistances between the spots thereof and the positions thereof beingdifferent from one another, as disclosed in, for example, JP-A218163/1993, and JP-A 258239/1994. Alternatively, some spatial filters202 whose blocking patterns are different from each other may bepreviously prepared, and switched according to the circuit pattern. Theuse of the optical element that can be electrically controlled, such asa liquid crystal element, or a digital mirror device, can change theshape and size of the filter dynamically.

The aperture of the objective 3 b in the oblique detection system 2001,which is inclined with respect to the direction of the normal line ofthe substrate W of interest to be inspected is an aperture 801 shown inFIG. 8C. In the embodiment, the detection azimuth angle is 270 degrees.The reason why the optical axis of the oblique detection system 2001 isinclined at an angle of β from the horizontal direction is that thehigh-order diffracted light is intended to be detected as compared withthe case of the detection optical system 2000 which is not inclined withrespect to the direction of the normal line of the substrate W ofinterest for inspection.

Now, azimuths of illumination and of detection will be described indetail. Generally, particles having a diameter of substantially not lessthan the wavelength of illumination tend to be forward scatteredincreasingly in the traveling direction of illumination. In contrast,particles having a diameter smaller than the wavelength of illumination(for example, a diameter of about one fourth of the wavelength) tend tobe scattered isotropically in all directions. Therefore, when foreignmatter or default having a size of not less than the wavelength is to bedetected, the illumination and detection azimuths may be set so as todetect the forward scattering more than the other scattering. When theforeign matter or default that is sufficiently smaller than thewavelength is intended to be detected with high sensitivity, theillumination and detection azimuths should be set so as to block thescattered light from the pattern, which may interfere with thedetection, and to detect the side or back scattering more than the otherscattering, which is difficult to detect.

As shown in FIG. 13, for the detection from the direction of zero degree(the detection at an azimuth angle of zero degree), the illuminatinglight (illumination A) enters the substrate in the direction of theazimuth angle of θ<90 degrees, so that the forward scattered light isdetected. The illuminating light (illumination C) enters the substratein the direction of the azimuth angle θ=about 90 degrees, so that thebackward scattered light is detected. The illumination light(illumination B) enters the substrate in the direction of the azimuthangle of θ>90 degrees, so that the backward scattered light is detected.Thus, the switching among the illustration directions can change thesensitivity property to the size of the foreign matter or default.Furthermore, the illuminating light enters the substrate in thedirections at the azimuth angle of θ<90 degrees and at the azimuth angleof θ>90 degrees at the same time, thereby enabling the detection of thedefault sufficiently smaller than the wavelength thereof as well as thedefault substantially equal to or above the wavelength thereof in abalanced manner. FIG. 13 illustrates a relationship among theillustration directions at the angle of θ=about 45 degrees (illuminationA), θ=about 90 degrees (illumination C), and θ=about 135 degrees(illumination B), and the detection direction at the angle of θ=0degree.

FIG. 29 illustrates a positional relationship between the illuminationoptical system and the detection optical system when the illuminatinglight is applied from the two directions at different azimuth angles. Anoblique illumination system 1000′ has substantially the same function asthat of the oblique illumination system 1000 shown in FIG. 1, butdiffers from the system 1000 in that an optical path branching element150 is provided between the light source 100 and the lens system 200.With this arrangement, the illuminating light emitted from the lightsource 100 enters the optical path branching element 150 (for example, abeam splitter), which branches the light path into two paths. In one ofthe light paths, the light enters the lens system 200, and in the other,the light enters the lens system 200′. These lights are simultaneouslyapplied to the same part on the substrate W of interest for inspection,that is, the area LS shown in FIG. 13 in a linear manner. The lenssystem 200′ has the structure that conforms to that of the lens system200.

The light reflected and scattered from the area LS in this illuminationenters the upward detection system 2000 and the oblique detection system2001, respectively, to be detected by these respective systems. Signalsrespectively detected by the upward detection system 2000 and theoblique detection system 2001 are processed in the same manner as thatexplained using FIG. 1. The use of the light source 100 is sharedbetween the lens system 200 and the lens system 200′, by which thelights applied to the substrate W of interest to be inspected have thesame property to each other. Thus, the processing of the signalsrespectively detected by the upward detection system 2000 and theoblique detection system 2001 is relatively simple as compared with thecase of independently using light sources.

On the other hand, alternatively, in the structure shown in FIG. 29, thetotal reflection mirror is employed in the optical path branchingelement 150 to switch the incident light to one of the two opticalpaths, thereby outputting the light therefrom. This can switch among theazimuth angles of illustration, thereby irradiating the substrate W ofinterest to be inspected with the light. Furthermore, in the structureof FIG. 29, the detection system may be either the upward detectionsystem 2000 or the oblique detection system 2001.

FIG. 16 illustrates a first modification of the detecting apparatusaccording to the embodiment of the invention. In this modification, thedefect detecting apparatus includes the X-Y-Z-θ stage 17, the X-Y-Z-θstage driver 16, an object to be detected (a semiconductor substrate ofinterest to be inspected) W, the light source driver 15, the obliqueillumination system 1000, the oblique detection system 2001, thecomparison processor for determination of defects 3000, the computer 11,the display 12, the central processing unit 13, and the storage device14. This structure differs from the previous example in that the upperdetection system 2000 explained in the structure shown in FIG. 1 is notprovided. Since this structure does not include the upward detectionsystem, it is less expensive than the structure of the previous example,and can detect the substrate of interest for inspection with thetransparent film formed thereon with high sensitivity. In the structureshown in FIG. 16, elements designated by the same reference numerals asthose of FIG. 1 have the same functions as those explained using FIG. 1.Also in this first modification, the illumination optical system can beapplied which is composed of the oblique illumination system 1000′ andthe lens system 200′ as explained in FIG. 29, and which irradiates thesubstrate W of interest for inspection from two directions at differentazimuth angles.

FIG. 28 illustrates a second modification of the detecting apparatusaccording to the embodiment of the invention. The defect detectingapparatus in this modification includes the X-Y-Z-θ stage 17, theX-Y-Z-θ stage driver 16, the object to be detected (the semiconductorsubstrate of interest to be inspected) W, the light source driver 15,the oblique illumination system 1000, the oblique detection systems 2001and 2001′, the comparison processors for determination of defects 3001and 3001′, the computer 11, the display 12, the central processing unit13, and the storage device 14. The structure of this modificationdiffers from the structure of the example shown in FIG. 1 in that twooblique detection systems 2001 and 2001′ are provided without thedetection optical system corresponding to the upward detection system2000 explained in FIG. 1, and that the comparison processors fordetermination of defects 3001 and 3001′ are provided corresponding tothe respective oblique detection systems. A delay circuit 7 b′, a memory8 b′, a memory 9 b′, and a comparison circuit 10 b′ constituting thecomparison processor for determination of defects 3001′ have the samerespective functions as those of the delay circuit 7 b, the memory 8 b,the memory 9 b, and the comparison circuit 10 b, which constitute thecomparison processor 3001 for determination of defects explained inFIG. 1. In this structure, the two oblique detection systems 2001 and2001′ are set to have different azimuth angles of detection, therebysimultaneously performing the detection of forward scattering andbackward scattering. Furthermore, by comparing a defect signal providedby the detection of the forward scattering with a defect signal providedby the detection of the backward scattering, the size of the defect canbe estimated. More specifically, this can be done using the principle ofdistribution of scattering angles that the larger the size of defect,the larger the ratio of the defect signal provided by the forwardscattering detection.

With the arrangements described above, the intensity of light from thepattern detected by the oblique detection system 2001 can be relativelydecreased as compared with the intensity of light from the patterndetected by the upward detection system 2000. Moreover, in theseembodiments, the appropriate selection of the elevation angle α andpolarization of the illuminating light, and the elevation angle β andpolarization of detection can improve the sensitivity of detection ofdefects in a case where the transparent film is formed on the substrateW of interest to be inspected. This fact will be explained using FIGS.19 to 22.

First, the selection of the elevation angle α and polarization of theilluminating light will be described below. FIG. 22A shows transmittanceof S polarization and P polarization through a silicon oxide film (SiO2)with respect to an incident angle when light enters the film from air.The larger the incident angle of each of the S polarization and Ppolarization, the smaller the transmittance into the film. Thetransmittance of the S polarization into the film is smaller than thatof the P polarization.

Thus, decreasing the elevation angle α of the illuminating light canreduce the intensity of light proceeding into the film with respect tothe intensity of light reflected from the film. Furthermore, the use ofthe S polarization can further decrease the intensity of lightproceeding into the film. For example, for α=five degrees, thetransmittances of the S polarization and the P polarization into thefilm are 28% and 50%, respectively. For α=three degrees, thetransmittances of the S polarization and the P polarization into thefilm are 18% and 34%, respectively.

This can detect the defect signal indicative of the defect on the filmwith high sensitivity by relatively emphasizing the lighting of thedefect on the film with respect to the pattern formed in the film,without being hidden in a scattered and diffracted light signal from thepattern in the film. The selection of the direction of polarization ofthe illumination is carried out by disposing and controlling awavelength plate or a polarizing plate in the illumination opticalsystem 200.

Although the illuminating at the low elevation angle as described abovecan decrease the intensity of the signal from the pattern in the film,when the pattern is still large as compared with the size of the defectto be detected, the diffracted and scattered light from the pattern inthe transparent film may be detected in the form of a large signalintensity as compared to the defect.

As shown in FIG. 22B, also the light emitted from the inside of thetransparent film at the low elevation angle has the smaller intensity oflight. Therefore, the smaller the detection elevation angle β of theoblique detection system 2001, the smaller the intensity of thescattered light from the pattern in the transparent film can be set.Furthermore, selective detection of an S-polarization component, orsetting the S polarization as a polarization state of illumination canfurther reduce the intensity of scattered light from the pattern in thetransparent film. For example, when the polarization detected is Spolarization and the detection elevation angle is 15 degrees, the signalintensity from the pattern in the film can be decreased up to 60%,compared with the case of detection of the substrate W of interest forinspection from the direction of the normal line. Selection of thepolarization to be detected can be carried out by installing an analyzerthrough which the light in a specific polarization condition isselectively transmitted, as the detection-light optical filter 302 b.

As mentioned above, the illuminating at the low elevation angle and thedetection at the low elevation angle can largely decrease the signalintensity from the pattern in the film, thereby selectively detectingonly the defect on the transparent film.

When there are variations in thickness of the transparent film on theobject W of interest to be inspected, the intensity of the diffractedand reflected light from the pattern to be detected may be varied due tothe thin-film interference. For this reason, in determination of thedefect, the comparison processing may be erroneously performed, whichmay result in misinformation on defects. This may be a cause of adecrease in sensitivity of detection. Accordingly, the elevation angle βof detection is set to an angle near a Brewster angle defined by theindex of refraction of the transparent film, and the P-polarizationcomponent is selectively detected. This can reduce variations inbrightness caused by the pattern in the transparent film due to adifference in thickness of the film. This method can detect the defectsof the pattern in the film with high sensitivity. The principle of thismethod will be described below using FIGS. 19 to 21.

FIG. 19 is a diagram for explaining the thin-film interference by thetransparent thin film. The pattern irradiated with the light from theoblique illumination system 1000 generates the diffracted and scatteredlight having a distribution of angles. FIG. 19A illustrates an opticalpath of a diffracted and scattered light component whose incident angleat an interface between the transparent film and the air is (Φ₁, andwhose emission angle from the transparent film to the air is Φ₀, thatis, a light component observed in the direction of an angle of Φ₀ withrespect to the normal line of the substrate W of interest to beinspected. Interference arises between the transmitted light withoutbeing reflected at an interface between the air and the transparent film(interface 1), and the light reflected n times at the interface 1 andthen transmitted through the interface 1. The change in the filmthickness leads to a change in a difference of the optical path, whichenhances or weakens the intensity of light depending on the filmthickness. This is observed as variations in brightness.

In the structure shown in FIG. 19A, when an amplitude of the diffractedand scattered light generated from the pattern in the film is a0, anamplitude reflectance, and an amplitude transmittance of the lightincident from a medium 1 to a medium 0 are r10, and t10, respectively,and an amplitude reflectance of the light incident from the medium 1 toa medium 2 is r12, a light component observed in the direction of aninclined angle of Φ₀ with respect to the normal line of the substrate Wof interest to be inspected, that is, the amplitude of an interferencewave of luminous fluxes 0 to n is represented by the following formula(2). An intensity I of an interference light in the direction of aninclined angle of Φ₀ with respect to the normal line of the substrate Wof interest to be inspected is determined according to the followingformula (3) using the formula (2).

$\begin{matrix}{{at}_{10}{\sum\limits_{n = 0}^{\infty}\left\lbrack {r_{10}r_{12}{\exp ({\delta})}} \right\rbrack^{n}}} & \left( {{Formula}\mspace{14mu} 2} \right) \\{I = {\frac{\left( {at}_{10} \right)^{2}}{1 + \left( {r_{10}r_{12}} \right)^{2} - {2r_{10}r_{12}\cos \mspace{11mu} \delta}}\frac{N_{0}\mspace{11mu} \cos \mspace{14mu} \phi}{N_{1}\mspace{11mu} \cos \mspace{11mu} \phi_{1}}}} & \left( {{Formula}\mspace{14mu} 3} \right)\end{matrix}$

where the above-mentioned amplitude reflectance and amplitudetransmittance are determined by a Fresnel formula, depending on therefractive index of the medium and an incident angle thereof into aninterface. The character δ used in the formulas 2 and 3 designates adifference in phase of transmitted adjacent lights, and is representedby the following formula (4) using a refractive index N1 of the medium1, a film thickness d1, and a wavelength 2 of the diffracted andscattered light. The formulas (3) and (4) show that a change in filmthickness may cause a change in the intensity of the interference light.FIG. 19B shows an example of a change in brightness of the interferencelight with respect to variations in film thickness.

δ=4πN1d1 cos φ1/λ  (Formula 4)

The formula (3) shows that the degree or size of variations in thebrightness due to the film thickness depends on coefficients r10r12 forthe term cos δ, and the smaller, the absolute value of the r10r12, thesmaller the variations in the brightness becomes. Decreasing theabsolute value of the r10r12 leads to decreasing the amplitude of theluminous flux n (n=1, 2, 3, . . . . ) that interferes with the luminousflux 0 in FIG. 19A.

FIG. 20A is a graph showing dependency of the amplitude reflectance r10of the S polarization on the angle Φ₀ at the interface 1 when the medium0 is air, the medium 1 is the silicon oxide film (SiO2), and the medium2 is a silicon substrate (Si). FIG. 20B is a graph showing that of the Ppolarization. FIG. 20C shows a range of variations in the intensity ofthe light that is generated from the pattern in the film and emittedfrom the interface 1 in the direction of the angle of Φ₀ when the medium0 is air, the medium 1 is the silicon oxide film (SiO2), and the medium2 is a silicon substrate (Si). A solid line in FIG. 20C represents theintensity of the interference light when a difference in phase δ is zerodegrees, whereas a dashed line represents the intensity of theinterference light when a difference in phase δ is 180 degrees. Thedifference between these intensities indicates the variations in theintensity of the interference light, or the size of variations in thebrightness, which is shown by a dashed-dotted line. When the angle Φ₀ isabout 56 (Φ₀=56 degrees) (Brewster angle), the amplitude reflectance ofthe P polarization becomes zero. Thus, the P-polarization component ofthe diffracted and scattered light emitted in the direction of theBrewster angle does not cause variations in brightness due to the changein film thickness.

When the angle Φ₀ is around the Brewster angle, the amplitudereflectance of the P polarization approaches zero. This significantlyreduces the variations in the brightness of the P-polarization componentof the diffracted and scattered light due to the change in the filmthickness, which is emitted in the direction of the angle around theBrewster angle. For example, under the condition shown in FIG. 20B, whenthe size of variations in the brightness of the light is 1 at the angleΦ₀ of 90 degrees, the sizes of the variations in the brightness oflights emitted at angles in ranges of 5 degrees, 10 degrees, and 15degrees around the Brewster angle are 5%, 9%, and 14%, respectively.

Similarly, the angle t is set such that the angle Φ₁ is the Brewsterangle at the interface 2, and thus the reflectance r12 of the Ppolarization at the interface 2 approaches zero, thereby decreasingvariations in the brightness.

The refractive index of the transparent film, such as a silicon oxidefilm (SiO2), or a silicon nitride film (Si3N4), which is often used in asemiconductor process, does not change largely at a wavelength in arange including a DUV, a UV, and an optical wavelength (200 nm to 700nm). Thus, the above-mentioned method for decreasing variations in thebrightness can also be useful for multi-wavelength illuminationincluding the DUV, the UV, and the optical wavelength, widebandillumination, or white illumination. Also in the second modification,the illumination optical system for irradiating the substrate W ofinterest to be inspected with light from two directions of differentazimuth angles can be applied which comprises the oblique illuminationsystem 1000′ and the lens system 200′ explained in FIG. 29. In thiscase, an appropriate combination of an azimuth angle of illumination andan elevation angle of detection is selected thereby to perform thedetection. This can select the combination of the azimuth angle ofillumination and the elevation angle of detection according to a defectto be detected, thereby improving the efficiency and accuracy of thedetection.

When the illuminating light by the oblique illumination system 1000 is Ppolarization using the detection-light optical filter means 302 b in thestructure shown in FIG. 1, the ratio of the P-polarization component tothe diffracted and scattered light from the substrate W of interest tobe inspected becomes large. This can increase the amount of detectionlight for detection of only the P-polarization component, therebydetecting the defects of the pattern in the film with high sensitivity.

In order to decrease the variations in the brightness in detection, theabove-mentioned structure may be used to selectively detect theP-polarization component of the diffracted and scattered light emittedin the direction of an angle from the normal line of the substrate W ofinterest corresponding to the angle Φ₀, which is the Brewster angle.When the direction of the above-mentioned angle Φ₀ is included within anangle range collectable by the objective lens 3 a of the upwarddetection system 2000 with its NA, the selective detection can becarried out by the upward detection system 2000. When the direction ofthe above-mentioned angle Φ₀ is not included within an angle rangecollectable by the objective lens 3 a of the upward detection system2000 with its NA, the selective detection can be carried out by theoblique detection system 2001.

The refractive index of the transparent film, such as a silicon oxidefilm (SiO2), or a silicon nitride film (Si3N4), which is often used in asemiconductor process, is larger than one in a range of the DUV, UV, oroptical wavelengths. Thus, the Brewster angle at the interface betweenthe transparent film and the air is larger than 45 degrees, which is anemission angle on the air side. Therefore, in the structure shown inFIG. 1, in order to detect the diffracted and scattered light at thisemission angle in the upward detection system 2000, it is necessary touse the objective lens 3 a with a high NA of at least 0.7. The objectivelens 3 a with the high NA including the above-mentioned angle Φ₀ isused, and a spatial filter means is further used as a spatial filter 4 afor transmitting the diffracted and scattered light in a specific rangeof elevation angles over all azimuth angles, such as a spatial filterfor selective detection of a high elevation angle (FIG. 21A), a spatialfilter for selective detection of a middle elevation angle (FIG. 21B),and a spatial filter for selective detection of a low elevation angle(FIG. 21C) as shown in FIGS. 21A to C. This can transmit selectivelyonly the light emitted in the direction of the angle Φ₀, and detect onlythe P polarization using the analyzer, thereby decreasing the variationsin the brightness, and detecting the defect. In this case, the substrateW of interest to be inspected with the transparent film formed thereoncan be inspected with high sensitivity without using the obliquedetection system 2000. Furthermore, this structure can detect thediffracted and scattered light components over all azimuth angles of anangle Φ₀ from the normal line of the substrate W of interest forinspection, and thus has an advantage in a large amount of detectionlight.

When the direction of the above-mentioned angle Φ₀ is not includedwithin an angle range collectable by the objective lens 3 a of theupward detection system 2000 with its NA, the detection elevation angleβ of the oblique detection system 2001 is set to an angle correspondingto the angle Φ₀, and only the P-polarization component is transmittedthrough the medium using the analyzer, the detection of defects can bedone, while decreasing the variations in the brightness. In this case,the objective lens 3 a with the high NA does not need to be used, andthe upward detection system 2000 can be formed at a low cost.Additionally, since the NA of the upward detection system 2000 does notneed to be limited, the oblique detection system 2001 can inspect atransparent-film forming area on the substrate W of interest forinspection with high sensitivity, and the upward detection system 2000can detect an area where variations in brightness due to the transparentfilm are not problematic, with high sensitivity.

As shown in FIG. 23A, the detection of defects on and in the film iscarried out by the detection of the Brewster angle of the P polarizationusing the upward detection system 2000 and the oblique detection system2001′ for selective detection of the high elevation angle as shown inFIG. 28. At the same time, the detection of defects on the film iscarried out by the detection of the low elevation angle using theoblique detection system 2001. As shown in FIG. 23B, logical calculationof the detection results enables the simultaneous detection of defectson and in the film, the detection of only the defects on the film, whichis categorized as the on-film defect among the on-film and in-filmdefects, and the detection of only the defects in the film.

Now, another modification of the illumination optical system 200 withthe arrangement shown in FIGS. 1, 16, and 28 in use of a UV laser, suchas a KrF laser, or an ArF laser, as the light source 100 will bedescribed in detail with reference to FIGS. 30 to 33.

Since the amount of scattered light generating in the form of fineparticles of 0.1 μm or less in diameter is inversely proportional to thefourth power of the illumination wavelength, the wavelength ofilluminating light is shortened, thereby achieving the high sensitivityof detection. To enhance the detection sensitivity of defects, the UVlaser whose wavelength is short may be used as a light source ofillumination.

When a pulse oscillation laser is used as the UV laser, the pulseoscillation laser has the very high peak value (maximum output) withrespect to the necessary average output. For example, when the laser hasan average output of 2 [W], a pulse interval of 10 [ns], and a pulsewidth of 10 [ps] at an emission frequency of 100 MHz, the peak value(maximum output) of the laser is 2 [kW], which may damage the specimen.For this reason, the peak value (maximum output) is desired to bedecreased, while keeping the average output.

In this modification, as shown in FIGS. 30A and B, a method fordecreasing the peak value with the average output being kept involvesmagnifying the laser beam emitted from the light source 100 by the beamexpander composed of the lens systems 200 a and 200 b, branching anoptical path of the beam entering a pulse branching optical system 220into a plurality of optical paths with different optical path lengths,thereby separating one pulse of the laser beam emitted from the lightsource into a plurality of pulses whose peak values are substantiallythe same, and irradiating the substrate W of interest to be inspectedwith a plurality of pulse lasers divided via the lens systems 200 a, 200b, and 200 c for forming the slit-like beam.

The pulse laser beam is divided into a plurality of beams to be applied.For example, the UV pulse laser beam with an emission frequency of 100MHz is divided into a plurality of beams, and applied under thecondition in which a traveling speed of the X-Y-Z-θ stage 17 on whichthe substrate W of interest to be inspected is put is 15 cm/sec, and adetection field of view per pixel of the detector 6 a or 6 b is 1 μm.Since the laser beams with 100 or more pulses are superimposed on eachother and applied at an area to be detected by one pixel of the detector6 a or 6 b, speckle noise caused by the laser beam is temporallyaveraged, and imaging can be carried out, thereby providing an imagewith the noise reduced.

A pulse-light division optical system 220 comprises a combination of ¼wavelength plates 221 a and 221 b, PBSs (deflection beam splitters) 222a and 222 b, and mirrors 223 a and 223 b, as shown in FIG. 31A. Thelaser beam magnified by the beam expander composed of the lens systems200 a and 200 b, and entering in the form of a linear polarization (inthis case, a P polarization) is formed into an elliptical polarizationby the ¼ wavelength plate 221 a, and then divided into the Ppolarization and the S polarization by the polarization beam splitter222 a. The P-polarization component, which is one of the dividedpolarizations, passes through the polarization beam splitter 222 a and apolarization beam splitter 222 b. The S-polarization component, which isthe other of the divided polarizations, is reflected from thepolarization beam splitter 222 a, the mirror 223 a, the mirror 223 b,and the polarization beam splitter 22 b, respectively, and returns tothe same optical axis as that of the P-polarization component whichpasses through the polarization beam splitters 22 a and 22 b. At thistime, when a distance between the polarization beam splitter 222 a andthe mirror 223 a, and a distance between the polarization beam splitter222 b and the mirror 223 b is set to L/2 [m], a difference in an opticalpath between the S-polarization component, and the P-polarizationcomponent is L [m]. When the light speed is represented by a referencecharacter c [m/s], a difference in time between the S-polarizationcomponent and the P-polarization component is generated according to theformula (5).

t[s]=L[m]/c[m/s]  (Formula 5)

As shown in FIG. 31B, the pulse light can be time-shared, and its peakvalue can be reduced to one half.

For example, when a distance between the polarization beam splitter 222a and the mirror 223 a, and a distance between the polarization beamsplitter 222 b and the mirror 223 b are set to 15 cm (0.15 m),respectively, using a laser with a pulse interval of 10 ns (8 to 10seconds), and with a pulse width of 10 ps (10 to 11 seconds), adifference in time between the S-polarization component and theP-polarization component is 1 ns (9 to 10 seconds). That is, a wafersurface is irradiated with a pulsing laser beam whose peak value isdecreased to one half of its original value, at intervals of twice pernanosecond for 10 ns.

When the ratio of the S-polarization component to the P-polarizationcomponent of the incident beam into the polarization beam splitter 222 ais set to 1:1 (circularly polarized light) by adjusting an angle ofrotation of a ¼ wavelength plate 221 a, the pulse light of theS-polarization component of a beam emitted from the polarization beamsplitter 222 b differs from the pulse light of the P-polarizationcomponent thereof in the peak value due to losses (of reflectance, andtransmittance) of an optical component used (polarization beam splitters222 a and 222 b, and the mirrors 223 a and 223 b). In order to decreasethe maximum peak value of each pulse light, the peak values of therespective pulse lights needs to be substantially the same to eachother.

In the structure of the pulse division optical system 200 shown in FIG.31A, the P-polarization component is affected by the P polarizationtransmittance (Tp) of the polarization beam splitters 222 a and 222 b,and while the S-polarization component is affected by the S polarizationtransmittance (Rs) of the polarization beam splitters 222 a and 222 b,and the S polarization transmittance (Rm) of the mirrors 223 a and 223b. A ratio of the loss of the S-polarization component to that of theP-polarization component (PI) is represented according to the followingformula:

PI=Ls/Lp=Rm2×Rs2/Tp2  (Formula 6)

where Ls is a loss of the S-polarization component, and Lp is a loss ofthe P-polarization component. Thus, the peak value of the pulse light ofthe S-polarization component of the beam emitted from the polarizationbeam splitter 222 b can be substantially equal to that of theP-polarization component of the emitted beam by adjusting the rotationangle of the ¼ wavelength plate 221 a such that the ellipticity of theincident beam polarization into the polarization beam splitter 222 a isequal to the above-mentioned loss ratio. These pulse lights of thedivided P and S-polarization components whose peak values aresubstantially identical to each other pass through the ¼ wavelengthplate 221 b to produce the circularly polarized light.

When linearly polarized light is used as the laser beam applied to thesubstrate W of interest to be inspected, a pulse division optical system200′ with the structure shown in FIG. 32A may be used. In thisstructure, the laser beam emitted from the light source 100 passesthrough an optical path which is defined by the polarization beamsplitters 222 a and 222 b, and the mirrors 223 a and 223 b, which arethe same as those shown in FIG. 31A, and is transmitted through the ¼wavelength plate 221 b to be changed into the circularly polarizedlight. The circularly polarized laser light enters the polarization beamsplitter 224, thus causing only the P-polarization component thereof topass through the splitter. The S-polarization component reflected fromthe polarization beam splitter 224, which may be stray light, is blockedby a beam trap 25. The P-polarization component divided by and passingthrough the polarization beam splitter 224 has its peak value decreasedto one half of the peak value of the circularly polarized light enteringthe polarization beam splitter 224. Therefore, the peak value of theP-polarization component which has passed through the polarization beamsplitter 224 is decreased to one fourth of the peak value of the pulselaser beam emitted from the light source 100 as shown in FIG. 32B.

In a case where only the S polarization is used, a ½ wavelength plate(not shown) is inserted after the polarization beam splitter 224 torotate the direction of the polarization by an angle of 90 degrees.Alternatively, the polarization beam splitter 224 may be rotated aroundthe center of an optical axis by an angle of 90 degrees (while, in thiscase, the position of insertion of the beam trap 25 is changed). If thepolarization direction is optional, the emitted beam from thepolarization beam splitter 222 b may be used as it is. In this case, thepeak value of the pulse laser light which is applied to the substrate Wof interest to be inspected is one half of the peak value of the pulselaser beam emitted from the light source 100.

Although the pulse light is divided into two lights using the pulsedivision optical systems 200 or 200′ in the above description, theinvention is not limited thereto. In order to increase the number ofdivisions of the light, a method for dividing the light into four lightsusing a modification of the pulse division optical system 200 will bedescribed below with reference to FIGS. 32A and 32B. The structure of apulse division optical system 200″ shown in FIG. 33A is composed of twostages, each stage comprising the pulse division optical system 200shown in FIG. 31A. A distance between the polarization beam splitter 222c and the mirror 223 c of the second stage, and a distance between thepolarization beam splitter 222 d and the mirror 223 d thereof are twiceas long as that between the polarization beam splitter 222 c and themirror 223 c of the first stage, and that between the polarization beamsplitter 222 d and the mirror 223 d thereof, respectively. The beamemitted from the polarization beam splitter 222 b of the first stage isan S polarized pulse light that is delayed in time from a P polarizedpulse light. The pulse light string is formed into the circularlypolarized light by the ¼ wavelength plate 221 b. Thus, a part of thepulse light string transmitted through the ¼ wavelength plate 221 b tohave its intensity which is one half of that of the pulse light stringis the P polarization. The P polarization is transmitted through thepolarization beam splitters 222 c and 222 d. On the other hand, aremaining part of the pulse light string transmitted through the ¼wavelength plate to have its intensity which is one half of the pulselight string is the S polarization. The S polarization is reflected fromthe polarization beam splitters 222 c and 222 d and the mirrors 223 cand 23 d to return to the same optical axis. Thus, as shown in FIG. 33B,the pulse light is divided into four lights, each of which has its peakvalue that is decreased to one fourth of that of the pulse laser beamemitted from the light source 100. Strictly speaking, as mentionedabove, due to the loss by the optical component, the peak value isdecreased to less than one fourth of that of the pulse laser beam.

In the structure shown in FIG. 33A, P polarized pulse laser lightpassing through the polarization beam splitter 222 d after thepolarization beam splitter 222 c, and S polarized pulse laser lightreflected by the mirror 223 d and by the polarization beam splitter 222d enter the ¼ wavelength plate 221 c through the same optical axis, sothat respective circularly polarized lights are emitted from the pulsedivision optical system 200″. On the other hand, the circularlypolarized light emitted from the ¼ wavelength plate 221 c enters apolarization beam splitter (not shown), which corresponds to thepolarization beam splitter 224 shown in FIG. 32A, to be separated intothe P-polarization component and the S-polarization component. This canirradiate a wafer 1 with only the P-polarization component. (In thiscase, the peak value of a pulse beam of the P-polarization componentdivided by the above-mentioned polarization beam splitter not shown isone eighth of that of the pulse laser beam emitted from the light source100.)

Restrictions imposed on the above-mentioned examples are the followingtwo points. First, an optical path difference (L) in the first stage islonger than a coherence length of laser light used (A) as shown in thefollowing formula (7)

L>Λ=λ2/Δλ,  (Formula 7)

where λ is a wavelength, and Δλ is a range of wavelengths. Secondly, thepulse light string divided is within an oscillation interval of thelaser as shown in the following formula (8).

L(n+1)<c·(1/f)  (Formula 8)

where L is an optical path difference in the first stage, n is thenumber of stages, c is the light speed, and f is an oscillationfrequency of the laser.

According to the embodiments of the invention, since the UV pulse laserbeam can be applied to the wafer with its peak value decreased,micro-defects of less than 0.1 μm in diameter can be detected withoutdamaging the wafer.

The invention may be embodied in other specific forms without departingfrom the spirit or essential characteristics thereof. The presentembodiment is therefore to be considered in all respects as illustrativeand not restrictive, the scope of the invention being indicated by theappended claims rather than by the foregoing description and all changeswhich come within the meaning and range of equivalency of the claims aretherefore intended to be embraced therein.

1. A method for detecting a defect, comprising the steps of: irradiatingan area on a specimen, on which circuit patterns including repetitivepatterns are formed, with light which is formed to irradiate the slitshaped area from an oblique direction; detecting scattered light whichis scattered to at least back direction of the irradiation directionarea on the specimen by blocking belt-shaped light scattered from therepetitive patterns, thereby obtaining a detection signal; andprocessing said detection signal to detect defects, including foreignmatter, on the specimen; and displaying said detected defects on adisplay device; wherein the step of irradiating further comprises a stepof setting an azimuth angle at which the specimen is irradiated with thelight from said oblique direction to detect side or back scattered lightduring the step of detecting and to detect foreign matter during thestep of processing.
 2. The method for detecting a defect according toclaim 1, wherein the specimen has an optically transparent film formedon a surface thereof, the method further comprising a step ofdiscriminating defects existing on the optically transparent film fromdefects existing under the transparent film by processing the detectionsignal.
 3. A method for detecting a defect, comprising the steps of:irradiating an area on a specimen, on which circuit patterns includingrepetitive patterns are formed, with a first light which is formed toirradiate the slit shaped area on the specimen from an oblique directionat a first azimuth angle; irradiating the area on the specimen with asecond light which is formed to irradiate the slit shaped area on thespecimen from an oblique direction at a second azimuth angle; detectingscattered light which is scattered to at least back direction of theirradiation directions from the specimen irradiated with the first andsecond lights by blocking belt-shaped light scattered from saidrepetitive patterns, thereby obtaining a detection signal; andprocessing said detection signal to detect defects, including foreignmatter, on the specimen; and displaying said detected defects on adisplay device, wherein the step of irradiating further comprises a stepof setting an azimuth angle at which the specimen is irradiated with thelight from said oblique direction to detect side or back scattered lightduring the step of detecting and to detect foreign matter during thestep of processing.
 4. The method for detecting a defect according toclaim 3, wherein the specimen has an optically transparent film formedon a surface thereof, the method further comprising a step ofdiscriminating defects existing on the optically transparent film fromdefects existing under the transparent film by processing the detectionsignal.
 5. An apparatus for detecting a defect, comprising: a lightsource adapted to emit illumination light; a table for mounting aspecimen on which circuit patterns including repetitive patterns areformed; an irradiating optical unit which shapes the illuminating lightemitted from the light source so as to irradiate an area on the specimenmounted on the table from an oblique direction; a detection optical unitwhich detects scattered light which is scattered to at least backdirection of the irradiation direction by the irradiating optical unitfrom the area on the specimen by blocking belt-shaped light scatteredfrom the repetitive pattern; and a processor which processes a detectionsignal obtained by said detection optical unit, thereby detectingdefects, including foreign matter, on the specimen; and a display devicewhich displays results of processing by a processor, wherein theirradiating optical unit sets an azimuth angle of the light illuminatingthe area on the specimen that can be detected by the detection opticalunit, and foreign matter can be detected by the processor, and whereinthe detection optical unit includes a belt-shaped filter formed byblocking light scattered from the repetitive pattern among the reflectedand scattered light from the area on the specimen.
 6. The apparatus fordetecting a defect according to claim 5, wherein said light source emitsa pulsed laser, and wherein said irradiating optical unit includes apulse division unit for dividing one pulse of the pulsed laser emittedfrom said light source into a plurality of pulses, and is adapted toirradiate the specimen with the laser whose pulse is divided into theplurality of pulses by said pulse division unit.
 7. The apparatus fordetecting a defect according to claim 6, wherein said pulse divisionunit is adapted to divide the one pulse of the pulsed laser emitted fromthe light source into a plurality of pulses by introducing the pulsedlaser emitted from the light source into a plurality of optical pathswith different optical path lengths.
 8. The apparatus for detecting adefect according to claim 5, wherein said detection optical unitincludes a TDI sensor subjected to an anti-blooming treatment.